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| CHENMKO ENTERPRISE CO.,LTD CHT2301WPT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 2.3 Ampere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (3) SC-70/SOT-323 (2) 1.30.1 0.30.1 0.65 2.00.2 0.65 1.250.1 (1) CONSTRUCTION * P-Channel Enhancement MARKING * 21 D 0.05~0.2 0.1Min. 2.0~2.45 0.8~1.1 0~0.1 CIRCUIT 1G 3 2S Dimensions in millimeters SC-70/SOT-323 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHT2301WPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous (Note 1) -20 V V 8 -2.3 ID - Pulsed IS PD TJ,TSTG Drain-Source Diose Forward Current Maximum Power Dissipation (Note 1) (Note 2) A -10 -1.6 1250 -55 to 150 A mW C (Note 1) Operating and Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient 85 C/W 2004-8 RATING CHARACTERISTIC CURVES ( CHT2301WPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSS I GSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V -20 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) VSD Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A -0.6 130 V m 190 1.0 V Diose Forward Voltage VDS = 0V, IS = -1.0 A SWITCHING CHARACTERISTICS (Note 3) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time 4.32 VDS=-10V, ID=-1A VGS=-4.5V V DD= -10V ID = -1.0A , VGEN = -4.5 V RL= 10 , RGEN= 10 1.06 0.84 13 36 42 34 nS nC ton Note : 3. Guaranteed by design , not subject to production trsting RATING CHARACTERISTIC CURVES ( CHT2301WPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 10 10 Figure 2. Transfer Characteristics V G S =5 . 0 V I D , DRAIN-SOURCE CURRENT (A) 8 TJ=-55C I D , DRAIN-SOURCE CURRENT (A) 8 TJ=125C TJ=25C 4.5V 4.0V 3.5V 3.0V 6 6 V G S =2 . 5 V 4 4 V G S =2 . 0 V 2 2 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 0 5 6 0 1.0 2.0 3.0 4.0 VGS , GATE-TE-SOURCE VOLTAGE (V) 5.0 6.0 Figure 3. Breakdown Voltage Variation with Temperature 1.15 1.8 ID=-250uA 1.6 1.4 1.2 1.0 0.8 0.6 Figure 4. On-Resistance Variation with Temperature VGS=-4.5V ID=-2.8A BVDSS , NORMALIZED GATE-SOURCE 1.05 1.00 0.95 0.90 0.85 0.80 -50 DRAIN-SOURCE ON-RESISTANCE 1.10 BREAKDOWN VOLTAGE R DS(on) , NO RMALIZED -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (C) 100 125 0.4 -50 -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (C) 100 125 Figure 5. Gate Threshold Variation with Temperature 1.12 1.09 5 ID=-250uA Figure 6. Gate Charge VDS=10V ID=1.0A VGS , GATE TO SOURCE VOLTAGE (V) Vth , NORMALIZED GATE-SOURCE 4 THRESHOLD VOLTAGE 1.06 1.03 1.00 0.97 0.94 0.91 -50 3 2 1 0 -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (C) 100 125 0 1 2 3 4 5 Qg , TOTAL GATE CHARGE (nC) 6 7 8 |
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